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We are happiest with the CMOS technology -- bulk, SOI or SOS. We
also have performed several designs in the bipolar and BiCMOS technologies. We have worked
with GaAs and interface electronics (CMOS) for Josephson junction devices. We are
particularly pleased with our wide exposure to various CMOS processes and geometries. We
have participated in the development of devices utilizing N-well, P-well, Twin-Tub,
Trench, SOI and SOS approaches. We have designed mixed signal devices employing Poly/Poly,
Metal, Metal, Poly, Diffusion and multi-layer capacitors. We have employed thin film (high
rho) resistors, laser trimmed resistors, doped poly resistors, etc. We have designed mixed
signal circuits using virtually every combination of passive and active component. We have
utilized substrate transistors for reference and regulator designs.
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